Representative Publications before MIT
* correspondence, † equal contribution
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Science, Vol. 342, 833 (2013)
Layer-resolved graphene transfer via engineered strain layers
Jeehwan Kim*, Hongsik Park*, James B. Hannon, Stephen W. Bedell, Keith Fogel, Devendra K. Sadana, Christos Dimitrakopoulos*.
Nature Communications, Vol. 5, 4836 (2014)
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
Jeehwan Kim*, Can Bayram*, Hongsik Park*, Cheng-Wei Cheng, Christos Dimitrakopoulos, John A. Ott, Kathleen B. Reuter, Stephen W. Bedell, and Devendra K. Sadana.
Nature Communications, Vol. 6, 6391 (2015)
10.5% amorphous silicon/polymer tandem photovoltaic cell
Jeehwan Kim*, Ziruo Hong*, Gang Li, Tze-bin Song, Jay Chey, Devendra Sadana, and Yang Yang*.
Advanced Materials, Vol. 26, 4082 (2014)
9.4% efficient three-dimensional amorphous silicon solar cells on high aspect-ratio glass microcones
Jeehwan Kim*, Corsin Battaglia*, Mathieu Charrière, Augustin Hong, Wooshik Jung, Hongsik Park, Christophe Ballif, and Devendra Sadana.
Advanced Materials, Vol. 24, 1899 (2012)
Engineering of contact resistance between transparent single-walled carbon nanotube films and a-Si:H single junction solar cells by gold nanodots
Jeehwan Kim*, Augustin Hong, Bhupesh Chandra, George Tulevski, and Devendra K. Sadana.
ACS Nano, Vol. 6, 265 (2012)
Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres
Jeehwan Kim*, Augustin J. Hong, Jae-Woong Nah, Byungha Shin, Frances M. Ross, and Devendra K. Sadana.
Applied Physics Letters, Vol. 98, 082112 (2011)
Improved germanium n+/p diodes formed by coimplantation of antimony and phosphorus
Jeehwan Kim*, Stephen W. Bedell, and Devendra K. Sadana.
Applied Physics Letters, Vol 89, 152117 (2006)
The fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates
Jeehwan Kim* and Ya-Hong Xie.
Other Publications before MIT
20. Jeehwan Kim*, Homare Hiroi*, Teodor K. Todorov*, Oki Gunanwan, Masaru Kuwahara, Tayfun Gokmen, Dhruv Nair, Marinus Hopstaken, Byungha Shin, Hiroki Sugimoto, and David Mitzi, “High-efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter” Advanced Materials, Vol. 26, 7427 (2014)
19. Jeehwan Kim*, Stephen W Bedell, and Devendra Sadana, “Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near theoretical limit” Applied Physics Letters, Vol. 101, 112107 (2012)
18. Jeehwan Kim*, Ahmed Abou-Kandil, Augustin J. Hong, Mohamed Saad, Devendra K. Sadana, and Tze-Chiang Chen, “Efficiency Enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p-type a-SiC:H/transparent conducting oxide interface”, Applied Physics Letters, Vol. 99, 062102 (2011)
17. Jeehwan Kim*, Ahmed Abou-Kandil, Keith Fogel, Harold Hovel, and Devendra K Sadana “The role of high work-function metallic nanodots on the performance of a-Si:H solar cells : Offering ohmic contacts to light trapping”, ACS Nano, Vol. 4, 7331 (2010)
16.Jeehwan Kim*, Daniel Inns, Keith Fogel, and Devendra K. Sadana, “ Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask”, Solar Energy Materials and Solar Cells, Vol. 94, 2091 (2010)
15. Jeehwan Kim*, Daniel Inns, and Devendra K. Sadana, “Investigation on critical failure thickness of hydrogenated/non-hydrogenated amorphous silicon films”, Journal of Applied Physics, Vol. 107, 073507 (2010)
14. Jeehwan Kim*, Stephen W. Bedell, Siegfried Maurer, Rainer Loesing, and Devendra K. Sadana, “Activation of implanted n-type dopants in Ge over the active concentration of 1×1020 cm-3 using co-implantation of Sb and P”, Electrochemical and Solid-state Letters, Vol 13, H12 (2010)
13. Jeehwan Kim*, Daniel Inns, and Devendra K. Sadana, “Cracking behavior of evaporated amorphous silicon films”, Thin Solid Films, Vol. 518, 4908 (2010)
12. Jeehwan Kim*, Stephen Bedell, Devendra Sadana, “> 1020 cm-3 n-doping in Ge by Sb/P Co-implants: n+/p Diodes with Improved Rectification”, ECS Transactions, Vol 33, 201 (2010)
11. Jeehwan Kim*, Jae Young Lee, and Ya-Hong Xie, “Fabrication of dislocation-free Si films under uniaxial tension via oxidation of porous Si substrates”, Thin Solid Films, Vol 516, 7599 (2008)
10. Jeehwan Kim*, Biyun Li, and Ya-Hong Xie, “A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates”, Applied Physics Letters, Vol 91, 252108 (2007)
9. Can Bayram, John Ott, Kuen-Ting Shiu, Cheng-Wei Cheng, Yu Zhu, Jeehwan Kim, Manijeh Razeghi, and Devendra Sadana, “Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy”, Advanced Functional Materials, Vol. 24, 4492 (2014), Frontispiece
8. In-yeal Lee, Hyung-Youl Park, Jin-hyung Park, Gwangwe Yoo, Myung-Hoon Lim, Junsung Park, Rathi Servin, Woo-Shik Jung, Jeehwan Kim, Sang-Woo Kim, Yonghan Roh, Gil-Ho Kim and Jin-Hong Park, “Poly-4-vinylphenol and Poly(melamine-co-formaldehyde)-based Graphene Passivation Method for Flexible, Wearable and Transparent Electronics”, Nanoscale, vol. 6, no. 7, pp. 3830 – 3836, 2014.
7. Young T Chae, Jeehwan Kim, Hongsik Park, and Byungha Shin, “Building Energy Performance Evaluation of Building Integrated Photovoltaic (BIPV) Window with Semi-transparent Solar Cells”, Applied Energy, Vol. 129, 217 (2014)
6. Seong-Uk Yang, Seung-Ha Choi, Jongtaek Lee, Jeehwan Kim, Woo-Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin-Hong Park, “Depth-Controllable Ultra Shallow Indium Gallium Zinc Oxide/Gallium Arsenide Hetero Junction Diode”, Journal of Alloys and Compounds, Vol. 561, 228 (2013)
5. Osama Tobail, Jeehwan Kim, and Devendra Sadana, “Method to Determine the Collection Length in Field-Driven a-Si1-xGex:H Solar Cells”, Energy Procedia, Vol. 10, 213 (2011)
4. J. Liu, T. M. Lu, J. Kim, K. Lai, D. C. Tsui, and Y. H. Xie, “The proximity effect of the regrowth interface on two-dimensional electron density in strained Si”, Applied Physics Letters, Vol 92, 112113 (2008)
3. J. Liu, J.H. Kim, Y.H. Xie, T.M. Lu, and K. Lai, “Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes”, Thin Solid Films, Vol 517, 45 (2008)
2. T. M. Lu, J. Liu, J. Kim, K. Lai, D. C. Tsui, and Y. H. Xie, “Capacitively induced high mobility two-dimensional electron gas in undoped Si/Si1-xGex heterostructures with atomic-layer-deposited dielectric”, Applied Physics Letters, Vol 90, 182114 (2007)
1. Z. M. Zhao, T. S. Yoon, W. Feng, B.Y. Li, J. H. Kim, J. Liu, O. Hulko, Y. H. Xie, H. M. Kim, K. B. Kim, H. J. Kim, K. L. Wang, C. Ratsch, R. Caflisch, D. Y. Ryu, and T. P. Russell, “The challenges in guided self-assembly of Ge and InAs quantum dots on Si”, Thin Solid Films, Vol 508, No.1, 195 (2006)